Samsung’s 12nm DDR5 DRAM Begins Mass Production In 2023: 7.2 Gbps Pin Speeds, 23% Lower Power
Press Release: Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD. This technological leap was made possible through the use of a new high-κ material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics. Combined with advanced, multi-layer extreme ultraviolet (EUV) lithography, the new DRAM features the industry’s highest die density, which enables a 20 percent gain in wafer productivity. “Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, Senior VP, Corporate Fellow, and Client, Compute, and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.” via Samsung Leveraging the latest DDR5 standard, Samsung’s 12nm-class DRAM will help unlock speeds of up to 7.2 gigabits per second (Gbps). This translates into processing two 30 gigabyte (GB) UHD movies in just one second. The new DRAM’s exceptional speed is matched by greater power efficiency. Consuming up to 23 percent less power than the previous DRAM, the 12nm-class DRAM will be an ideal solution for global IT companies pursuing more environment-friendly operations. With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12nm-class process technology into a wide range of market segments, as it continues to work with industry partners to support the rapid expansion of next-generation computing.
